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M29W320DT M29W320DB
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase and Read
s s
Figure 1. Packages
- VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME - 10s per Byte/Word typical 67 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 64 Main Blocks
TSOP48 (N) 12 x 20mm
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s
PROGRAM/ERASE CONTROLLER - Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend
FBGA
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TFBGA63 (ZA) 63 ball array
s
UNLOCK BYPASS PROGRAM COMMAND - Faster Production/Batch Programming VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE - 64 bit Security Code LOW POWER CONSUMPTION - Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W320DT: 22CAh - Bottom Device Code M29W320DB: 22CBh
s
s
s
s
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May 2003
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M29W320DT, M29W320DB
TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 6. Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ8-DQ14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Input/Output or Address Input (DQ15A-1).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 VPP/Write Protect (VPP/WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset/Block Temporary Unprotect (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Ready/Busy Output (RB). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VCC Supply Voltage (2.7V to 3.6V).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VSS Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Special Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Block Protect and Chip Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Block Protect and Chip Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 2. Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 3. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read/Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Auto Select Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Unlock Bypass Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Unlock Bypass Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Chip Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Block Erase Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Erase Resume Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 5. Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 6. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 19 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Data Polling Bit (DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Toggle Bit (DQ6).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Error Bit (DQ5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Alternative Toggle Bit (DQ2).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 7. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 7. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 8. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 9. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 9. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 10. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 10. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 11. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 11. Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 12. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 12. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 13. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 13. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 14. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 14. Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 15. Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 15. Accelerated Program Timing Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline . 29 Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline . 29 Figure 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline . . . . . . . . . . 30 Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data . . . 30 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 18. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
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APPENDIX A. BLOCK ADDRESS TABLE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 19. Top Boot Block Addresses, M29W320DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 20. Bottom Boot Block Addresses, M29W320DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 21. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 22. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 23. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 24. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 25. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Table 26. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 APPENDIX C. BLOCK PROTECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Programmer Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 In-System Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Table 27. Programmer Technique Bus Operations, BYTE = V IH or VIL . . . . . . . . . . . . . . . . . . . . . 38 Figure 18. Programmer Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Figure 19. Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 20. In-System Equipment Block Protect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Figure 21. In-System Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Table 28. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
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SUMMARY DESCRIPTION The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command
set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Figures 5 and 6 and Tables 19 and 20. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32 Kbyte is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP48 (12 x 20mm) and TFBGA63 (7x11mm, 0.8mm pitch) packages. The memory is supplied with all the bits erased (set to 1).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A20 DQ0-DQ7 Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Byte/Word Organization Select Supply Voltage VPP/Write Protect Ground Not Connected Internally
VCC VPP/WP
DQ8-DQ14
21 A0-A20 W E G RP BYTE M29W320DT M29W320DB
15 DQ0-DQ14 DQ15A-1
DQ15A-1 E G W
RB
RP RB BYTE VCC
VSS
AI90189B
VPP/WP
VSS NC
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Figure 3. TSOP Connections
A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP NC VPP/WP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0
12 M29W320DT 37 13 M29W320DB 36
24
25
AI90190
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Figure 4. TFBGA Connections (Top view through package)
1 2 3 4 5 6 7 8
A
NC(1)
NC(1)
NC(1)
NC(1)
B
NC(1)
NC(1)
NC(1)
C
A3
A7
RB
W
A9
A13
D
A4
A17
VPP/WP
RP
A8
A12
E
A2
A6
A18
NC
A10
A14
F
A1
A5
A20
A19
A11
A15
G
A0
DQ0
DQ2
DQ5
DQ7
A16
H
E
DQ8
DQ10
DQ12
DQ14
BYTE
J
G
DQ9
DQ11
VCC
DQ13
DQ15 A-1
K
VSS
DQ1
DQ3
DQ4
DQ6
VSS
L
NC(1)
NC(1)
NC(1)
NC(1)
M
NC(1)
NC(1)
NC(1)
NC(1)
AI05525B
Note: 1. Balls are shorted together via the substrate but not connected to the die.
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Figure 5. Block Addresses (x8)
M29W320DT Top Boot Block Addresses (x8) M29W320DB Bottom Boot Block Addresses (x8)
3FFFFFh 16 KByte 3FC000h 3FBFFFh 8 KByte 3FA000h 3F9FFFh 8 KByte 3F8000h 3F7FFFh 32 KByte 3F0000h 3EFFFFh 64 KByte 3E0000h
3FFFFFh 64 KByte 3F0000h 3EFFFFh 64 KByte 3E0000h Total of 63 64 KByte Blocks
01FFFFh 64 KByte 010000h 00FFFFh 32 KByte Total of 63 64 KByte Blocks 008000h 007FFFh 8 KByte 006000h 005FFFh 8 KByte 004000h 003FFFh 16 KByte 000000h
01FFFFh 64 KByte 010000h 00FFFFh 64 KByte 000000h
AI90192
Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses.
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Figure 6. Block Addresses (x16)
M29W320DT Top Boot Block Addresses (x16) M29W320DB Bottom Boot Block Addresses (x16)
1FFFFFh 8 KWord 1FE000h 1FDFFFh 4 KWord 1FD000h 1FCFFFh 4 KWord 1FC000h 1FBFFFh 16 KWord 1F8000h 1F7FFFh 32 KWord 1F0000h
1FFFFFh 32 KWord 1F8000h 1F7FFFh 32 KWord 1F0000h Total of 63 32 KWord Blocks
00FFFFh 32 KWord 008000h 007FFFh 16 KWord Total of 63 32 KWord Blocks 004000h 003FFFh 4 KWord 003000h 002FFFh 4 KWord 002000h 001FFFh 8 KWord 000000h
00FFFFh 32 KWord 008000h 007FFFh 32 KWord 000000h
AI90193
Note: Also see Appendix A, Tables 19 and 20 for a full listing of the Block Addresses.
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SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ0-DQ7). The Data I/O outputs the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. Data Inputs/Outputs (DQ8-DQ14). The Data I/O outputs the data stored at the selected address during a Bus Read operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored. Data Input/Output or Address Input (DQ15A-1). When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A-1 Low will select the LSB of the Word on the other addresses, DQ15A-1 High will select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except when stated explicitly otherwise. Chip Enable (E). The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is High, V IH, all other pins are ignored. Output Enable (G). The Output Enable, G, controls the Bus Read operation of the memory. Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory's Command Interface. VPP/Write Protect (VPP/WP). The VPP/Write Protect pin provides two functions. The VPP function allows the memory to use an external high voltage power supply to reduce the time required for Unlock Bypass Program operations. The Write Protect function provides a hardware method of protecting the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected. When V PP/Write Protect is Low, VIL, the memory protects the 16 Kbyte Boot Block; Program and Erase operations in this block are ignored while VPP/Write Protect is Low.
When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the 16 Kbyte Boot Block unless the block is protected using Block Protection. When V PP/Write Protect is raised to VPP the memory automatically enters the Unlock Bypass mode. When V PP/Write Protect returns to VIH or VIL normal operation resumes. During Unlock Bypass Program operations the memory draws IPP from the pin to supply the programming circuits. See the description of the Unlock Bypass command in the Command Interface section. The transitions from VIH to V PP and from V PP to VIH must be slower than tVHVPP, see Figure 15. Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the memory may be left in an indeterminate state. A 0.1F capacitor should be connected between the VPP/Write Protect pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Unlock Bypass Program, I PP. Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if VPP/WP is at V IL, then the 16 KByte outermost boot block will remain protect even if RP is at VID. A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V IL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, V IH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 15 and Figure 14, Reset/ Temporary Unprotect AC Characteristics for more details. Holding RP at V ID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. Ready/Busy Output (RB). The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, V OL. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode.
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Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect even if RP is at VID. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Table 15 and Figure 14, Reset/Temporary Unprotect AC Characteristics. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in x8 mode, when it is High, V IH, the memory is in x16 mode. VCC Supply Voltage (2.7V to 3.6V). VCC provides the power supply for all operations (Read, Program and Erase). The Command Interface is disabled when the V CC Supply Voltage is less than the Lockout Voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1F capacitor should be connected between the V CC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Program and Erase operations, ICC3. VSS Ground. VSS is the reference for all voltage measurements.
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BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, V IL, to Chip Enable and Output Enable and keeping Write Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 11, Read Mode AC Waveforms, and Table 12, Read AC Characteristics, for details of when the output becomes valid. Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desired address on the Address Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus Write operation. See Figures 12 and 13, Write AC Waveforms, and Tables 13 and 14, Write AC Characteristics, for details of the timing requirements. Output Disable. The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V IH. Standby. When Chip Enable is High, VIH, the memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the Standby Supply Current, ICC2, Chip Enable should be held within VCC 0.2V. For the Standby current level see Table 11, DC Characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC3, for Program or Erase operations until the operation completes. Automatic Standby. If CMOS levels (VCC 0.2V) are used to drive the bus and the bus is inactive for 300ns or more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 2 and 3, Bus Operations. Block Protect and Chip Unprotect. Each block can be separately protected against accidental Program or Erase. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix C.
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Table 2. Bus Operations, BYTE = V IL
Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code
Note: X = VIL or VIH.
E VIL VIL X VIH VIL VIL
G VIL VIH VIH X VIL VIL
W VIH VIL VIH X VIH VIH
Address Inputs DQ15A-1, A0-A20 Cell Address Command Address X X A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH
Data Inputs/Outputs DQ14-DQ8 Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DQ7-DQ0 Data Output Data Input Hi-Z Hi-Z 20h CAh (M29W320DT) CBh (M29W320DB)
Table 3. Bus Operations, BYTE = V IH
Operation Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code
Note: X = VIL or VIH.
E VIL VIL X VIH VIL VIL
G VIL VIH VIH X VIL VIL
W VIH VIL VIH X VIH VIH
Address Inputs A0-A20 Cell Address Command Address X X A0 = VIL, A1 = VIL, A9 = VID, Others VIL or VIH A0 = VIH, A1 = VIL, A9 = VID, Others VIL or VIH
Data Inputs/Outputs DQ15A-1, DQ14-DQ0 Data Output Data Input Hi-Z Hi-Z 0020h 22CAh (M29W320DT) 22CBh (M29W320DB)
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COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 4, or 5, depending on the configuration that is being used, for a summary of the commands. Read/Reset Command. The Read/Reset command returns the memory to its Read mode where it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. The Read/Reset Command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to read mode. Once the program or erase operation has started the Read/Reset command is no longer accepted. The Read/Reset command will not abort an Erase operation when issued while in Erase Suspend. Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are required to issue the Auto Select command. Once the Auto Select command is issued the memory remains in Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/ Reset commands are accepted in Auto Select mode, all other commands are ignored. From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = V IL and A1 = VIL. The other address bits may be set to either V IL or VIH. The Manufacturer Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The other address bits may be set to either V IL or VIH. The Device Code for the M29W320DT is 22CAh and for the M29W320DB is 22CBh. The Block Protection Status of each block can be read using a Bus Read operation with A0 = V IL , A1 = V IH, and A12-A20 specifying the address of the block. The other address bits may be set to either V IL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output. Read CFI Query Command. The Read CFI Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This
command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode. One Bus Write cycle is required to issue the Read CFI Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. The Read/Reset command must be issued to return the device to the previous mode (the Read Array mode or Autoselected mode). A second Read/ Reset command would be needed if the device is to be put in the Read Array mode from Autoselected mode. See Appendix B, Tables 21, 22, 23, 24, 25 and 26 for details on the information contained in the Common Flash Interface (CFI) memory area. Program Command. The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. During the program operation the memory will ignore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in Table 6. Bus Read operations during the program operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit set at '0' back to '1'. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory. When the cycle time to the device is long (as with some EPROM programmers) considerable time saving can be made by using these commands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been issued the memory will only accept the Unlock By-
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pass Program command and the Unlock Bypass Reset command. The memory can be read as if in Read mode. The memory offers accelerated program operations through the VPP/Write Protect pin. When the system asserts V PP on the VPP/Write Protect pin, the memory automatically enters the Unlock Bypass mode. The system may then write the twocycle Unlock Bypass program command sequence. The memory uses the higher voltage on the VPP/Write Protect pin, to accelerate the Unlock Bypass Program operation. Never raise V PP/Write Protect to VPP from any mode except Read mode, otherwise the memory may be left in an indeterminate state. Unlock Bypass Program Command. The Unlock Bypass Program command can be used to program one address in the memory array at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Program operation using the Program command. The operation cannot be aborted, the Status Register is read and protected blocks cannot be programmed. Errors must be reset using the Read/ Reset command, which leaves the device in Unlock Bypass Mode. See the Program command for details on the behavior. Unlock Bypass Reset Command. The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset command does not exit from Unlock Bypass Mode. Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands, including the Erase Suspend command. It is not possible to issue any command to abort the operation. Typical chip erase times are given in Table 6. All Bus Read operations during the Chip Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to '1'. All previous data is lost. Block Erase Command. The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50s after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50s of the last block. The 50s timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register section for details on how to identify if the Program/ Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100s, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend command. Typical block erase times are given in Table 6. All Bus Read operations during the Block Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to '1'. All previous data in the selected blocks is lost. Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6
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for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start immediately when the Erase Resume Command is issued. It is not possible to select any further blocks to erase after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the Program command is ignored and the data remains unchanged. The Status Register is not read and no error condition is given. Reading from blocks that are being erased will output the Status Register. It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will be accepted. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller after an Erase Suspend. The device must be in Read Array mode before the Resume command will be accepted. An erase can be suspended and resumed more than once. Block Protect and Chip Unprotect Commands. Each block can be separately protected against accidental Program or Erase. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix C.
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Table 4. Commands, 16-bit mode, BYTE = VIH
Command Length Bus Write Operations 1st Addr X 555 555 555 555 X X 555 555 X X 55 Data F0 AA AA AA AA A0 90 AA AA B0 30 98 2AA 2AA 2AA 2AA PA X 2AA 2AA 55 55 55 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 BA 10 30 X 555 555 555 F0 90 A0 20 PA PD 2nd Addr Data 3rd Addr Data 4th Addr Data 5th Addr Data 6th Addr Data
1 Read/Reset 3 Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase Suspend Erase Resume Read CFI Query 3 4 3 2 2 6 6+ 1 1 1
Note: X Don't Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A-1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don't Care. DQ15A-1 is A-1 when BYTE is V IL or DQ15 when BYTE is VIH. Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is ignored during algorithm execution. Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status. Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/ Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additiona l Bus Write Operations until Timeout Bit is set. Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal. Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. CFI Query. Command is valid when device is ready to read array data or when device is in autoselected mode.
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Table 5. Commands, 8-bit mode, BYTE = VIL
Command Length Bus Write Operations 1st Addr X AAA AAA AAA AAA X X AAA AAA X X AA Data F0 AA AA AA AA A0 90 AA AA B0 30 98 555 555 555 555 PA X 555 555 55 55 55 55 PD 00 55 55 AAA AAA 80 80 AAA AAA AA AA 555 555 55 55 AAA BA 10 30 X AAA AAA AAA F0 90 A0 20 PA PD 2nd Addr Data 3rd Addr Data 4th Addr Data 5th Addr Data 6th Addr Data
1 Read/Reset 3 Auto Select Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase Suspend Erase Resume Read CFI Query 3 4 3 2 2 6 6+ 1 1 1
Note: X Don't Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A-1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don't Care. DQ15A-1 is A-1 when BYTE is V IL or DQ15 when BYTE is VIH. Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is ignored during algorithm execution. Auto Select. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status. Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/ Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additiona l Bus Write Operations until Timeout Bit is set. Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands. Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued. Erase Suspend. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program commands on non-erasing blocks as normal. Erase Resume. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. CFI Query. Command is valid when device is ready to read array data or when device is in autoselected mode.
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Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Accelerated Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data Retention
Note: 1. 2. 3. 4.
Min
Typ (1, 2) 40 0.8 15 10 8 40 20
Max(2) 200(3) 6(4) 25(4) 200(3) 150(3) 200(3) 100(3)
Unit s s s s s s s cycles years
100,000 20
Typical values measured at room temperature and nominal voltages. Sampled, but not 100% tested. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. Maximum value measured at worst case conditions for both temperature and VCC.
STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. The bits in the Status Register are summarized in Table 7, Status Register Bits. Data Polling Bit (DQ7). The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs '0', the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a '1' during a Bus Read operation within a block being erased. The Data Polling Bit will change from a '0' to a '1' when the Program/Erase Controller has suspended the Erase operation. Figure 7, Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Ad-
dress is the address being programmed or an address within the block being erased. Toggle Bit (DQ6). The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with successive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. If any attempt is made to erase a protected block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 100s. If any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 1s. Figure 8, Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit. Error Bit (DQ5). The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to '1' when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
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before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to '0' back to '1' and attempting to do so will set DQ5 to `1'. A Bus Read operation to that address will show the bit is still `0'. One of the Erase commands must be used to set all the bits in a block or in the whole memory from '0' to '1'. Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to '1'. Before the Program/Erase Controller starts the Erase Timer Bit is set to '0' and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. Alternative Toggle Bit (DQ2). The Alternative Toggle Bit can be used to monitor the Program/ Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. Table 7. Status Register Bits
Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Non-Erasing Block Erasing Block Erase Suspend Non-Erasing Block Good Block Address Erase Error Faulty Block Address
Note: Unspecified data bits should be ignored.
During Chip Erase and Block Erase operations the Toggle Bit changes from '0' to '1' to '0', etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from '0' to '1' to '0', etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly.
Address Any Address Any Address Any Address Any Address Erasing Block Non-Erasing Block Erasing Block
DQ7 DQ7 DQ7 DQ7 0 0 0 0 0 1
DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle No Toggle
DQ5 0 0 1 0 0 0 0 0 0
DQ3 - - - 1 0 0 1 1 -
DQ2 - - - Toggle Toggle No Toggle Toggle No Toggle Toggle
RB 0 0 0 0 0 0 0 0 1 1
Data read as normal 0 0 Toggle Toggle 1 1 1 1 No Toggle Toggle
0 0
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Figure 7. Data Polling Flowchart
START
Figure 8. Data Toggle Flowchart
START READ DQ6
READ DQ5 & DQ7 at VALID ADDRESS READ DQ5 & DQ6 DQ7 = DATA NO NO YES DQ6 = TOGGLE YES DQ5 =1 YES READ DQ7 at VALID ADDRESS NO NO
DQ5 =1 YES READ DQ6 TWICE
DQ7 = DATA NO FAIL
YES DQ6 = TOGGLE PASS YES FAIL
AI90194 AI01370C
NO
PASS
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MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at Table 8. Absolute Maximum Ratings
Symbol TBIAS TSTG VIO VCC VID VPP Temperature Under Bias Storage Temperature Input or Output Voltage (1,2) Supply Voltage Identification Voltage Program Voltage Parameter Min -50 -65 -0.6 -0.6 -0.6 -0.6 Max 125 150 VCC +0.6 4 13.5 13.5 Unit C C V V V V
these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Note: 1. Minimum voltage may undershoot to -2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot to V CC +2V during transition and for less than 20ns during transitions.
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M29W320DT, M29W320DB
DC AND AC PARAMETERS This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement
Conditions summarized in Table 9, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters.
Table 9. Operating and AC Measurement Conditions
M29W320D Parameter Min VCC Supply Voltage Ambient Operating Temperature Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 0 to VCC VCC/2 3.0 -40 30 10 0 to VCC VCC/2 70 Max 3.6 85 Min 2.7 -40 30 10 90 Max 3.6 85 V C pF ns V V Unit
Figure 9. AC Measurement I/O Waveform
Figure 10. AC Measurement Load Circuit
VPP VCC VCC/2 0V
AI90196
VCC
VCC
25k DEVICE UNDER TEST 25k
CL 0.1F 0.1F
CL includes JIG capacitance
AI90197
Table 10. Device Capacitance
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: Sampled only, not 100% tested.
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M29W320DT, M29W320DB
Table 11. DC Characteristics
Symbol ILI ILO ICC1 ICC2 Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Standby) Test Condition 0V VIN VCC 0V VOUT VCC E = VIL, G = VIH, f = 6MHz E = VCC 0.2V, RP = VCC 0.2V Program/ Erase Controller active VPP/WP = VIL or VIH VPP/WP = VPP -0.5 0.7VCC VCC = 3.0V 10% VCC = 3.0V 10% IOL = 1.8mA IOH = -100A VCC -0.4 11.5 A9 = VID 1.8 12.5 100 2.3 11.5 5 35 Min Typ. Max 1 1 10 100 20 20 0.8 VCC +0.3 12.5 10 0.45 Unit
A A
mA
A
mA mA V V V mA V V V
ICC3
(1)
Supply Current (Program/ Erase)
VIL VIH VPP IPP VOL VOH VID IID VLKO
Input Low Voltage Input High Voltage Voltage for VPP/WP Program Acceleration Current for VPP/WP Program Acceleration Output Low Voltage Output High Voltage Identification Voltage Identification Current Program/Erase Lockout Supply Voltage
A
V
Note: 1. Sampled only, not 100% tested.
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M29W320DT, M29W320DB
Figure 11. Read Mode AC Waveforms
tAVAV A0-A20/ A-1 tAVQV E tELQV tELQX G tGLQX tGLQV DQ0-DQ7/ DQ8-DQ15 tBHQV BYTE tELBL/tELBH tBLQZ
AI90198
VALID tAXQX
tEHQX tEHQZ
tGHQX tGHQZ VALID
Table 12. Read AC Characteristics
M29W320D Symbol Alt Parameter Test Condition 70 tAVAV tAVQV tELQX (1) tELQV tGLQX (1) tGLQV tEHQZ (1) tGHQZ (1) tEHQX tGHQX tAXQX tELBL tELBH tBLQZ tBHQV tRC tACC tLZ tCE tOLZ tOE tHZ tDF tOH tELFL tELFH tFLQZ tFHQV Address Valid to Next Address Valid Address Valid to Output Valid Chip Enable Low to Output Transition Chip Enable Low to Output Valid Output Enable Low to Output Transition Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Chip Enable, Output Enable or Address Transition to Output Transition Chip Enable to BYTE Low or High BYTE Low to Output Hi-Z BYTE High to Output Valid E = VIL, G = VIL E = VIL, G = VIL G = VIL G = VIL E = VIL E = VIL G = VIL E = VIL Min Max Min Max Min Max Max Max Min 70 70 0 70 0 30 25 25 0 90 90 90 0 90 0 35 30 30 0 ns ns ns ns ns ns ns ns ns Unit
Max Max Max
5 25 30
5 30 40
ns ns ns
Note: 1. Sampled only, not 100% tested.
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M29W320DT, M29W320DB
Figure 12. Write AC Waveforms, Write Enable Controlled
tAVAV A0-A20/ A-1 VALID tWLAX tAVWL E tELWL G tGHWL W tWHWL tDVWH DQ0-DQ7/ DQ8-DQ15 VALID tWHDX tWLWH tWHGL tWHEH
VCC tVCHEL RB tWHRL
AI90199
Table 13. Write AC Characteristics, Write Enable Controlled
M29W320D Symbol tAVAV tELWL tWLWH tDVWH tWHDX tWHEH tWHWL tAVWL tWLAX tGHWL tWHGL tWHRL (1) tVCHEL tOEH tBUSY tVCS Alt tWC tCS tWP tDS tDH tCH tWPH tAS tAH Parameter 70 Address Valid to Next Address Valid Chip Enable Low to Write Enable Low Write Enable Low to Write Enable High Input Valid to Write Enable High Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Address Valid to Write Enable Low Write Enable Low to Address Transition Output Enable High to Write Enable Low Write Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Chip Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 70 0 45 45 0 0 30 0 45 0 0 30 50 90 90 0 50 50 0 0 30 0 50 0 0 35 50 ns ns ns ns ns ns ns ns ns ns ns ns s Unit
Note: 1. Sampled only, not 100% tested.
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M29W320DT, M29W320DB
Figure 13. Write AC Waveforms, Chip Enable Controlled
tAVAV A0-A20/ A-1 VALID tELAX tAVEL W tWLEL G tGHEL E tEHEL tDVEH DQ0-DQ7/ DQ8-DQ15 VALID tEHDX tELEH tEHGL tEHWH
VCC tVCHWL RB tEHRL
AI90200
Table 14. Write AC Characteristics, Chip Enable Controlled
M29W320D Symbol tAVAV tWLEL tELEH tDVEH tEHDX tEHWH tEHEL tAVEL tELAX tGHEL tEHGL tEHRL (1) tVCHWL tOEH tBUSY tVCS Alt tWC tWS tCP tDS tDH tWH tCPH tAS tAH Parameter 70 Address Valid to Next Address Valid Write Enable Low to Chip Enable Low Chip Enable Low to Chip Enable High Input Valid to Chip Enable High Chip Enable High to Input Transition Chip Enable High to Write Enable High Chip Enable High to Chip Enable Low Address Valid to Chip Enable Low Chip Enable Low to Address Transition Output Enable High Chip Enable Low Chip Enable High to Output Enable Low Program/Erase Valid to RB Low VCC High to Write Enable Low Min Min Min Min Min Min Min Min Min Min Min Max Min 70 0 45 45 0 0 30 0 45 0 0 30 50 90 90 0 50 50 0 0 30 0 50 0 0 35 50 ns ns ns ns ns ns ns ns ns ns ns ns s Unit
Note: 1. Sampled only, not 100% tested.
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M29W320DT, M29W320DB
Figure 14. Reset/Block Temporary Unprotect AC Waveforms
W, E, G tPHWL, tPHEL, tPHGL RB tRHWL, tRHEL, tRHGL RP tPLPX tPHPHH tPLYH
AI02931B
Table 15. Reset/Block Temporary Unprotect AC Characteristics
M29W320D Symbol tPHWL (1) tPHEL tPHGL (1) tRHWL (1) tRHEL (1) tRHGL
(1)
Alt
Parameter 70 RP High to Write Enable Low, Chip Enable Low, Output Enable Low 90
Unit
tRH
Min
50
50
ns
tRB
RB High to Write Enable Low, Chip Enable Low, Output Enable Low RP Pulse Width RP Low to Read Mode RP Rise Time to VID VPP Rise and Fall Time
Min
0
0
ns
tPLPX tPLYH (1) tPHPHH (1) tVHVPP (1)
tRP tREADY tVIDR
Min Max Min Min
500 10 500 250
500 10 500 250
ns s ns ns
Note: 1. Sampled only, not 100% tested.
Figure 15. Accelerated Program Timing Waveforms
VPP VPP/WP VIL or VIH tVHVPP
tVHVPP
AI90202
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M29W320DT, M29W320DB
PACKAGE MECHANICAL Figure 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline
1 48
e
D1
B
24
25
L1 A2 A
E1 E
DIE
A1 C CP
L
TSOP-G
Note: Drawing not to scale.
Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data
millimeters Symbol Typ A A1 A2 B C CP D1 E E1 e L L1 12.000 20.000 18.400 0.500 0.600 0.800 3 0 5 11.900 19.800 18.300 - 0.500 0.100 1.000 0.220 0.050 0.950 0.170 0.100 Min Max 1.200 0.150 1.050 0.270 0.210 0.080 12.100 20.200 18.500 - 0.700 0.4724 0.7874 0.7244 0.0197 0.0236 0.0315 3 0 5 0.4685 0.7795 0.7205 - 0.0197 0.0039 0.0394 0.0087 0.0020 0.0374 0.0067 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.0031 0.4764 0.7953 0.7283 - 0.0276 inches
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M29W320DT, M29W320DB
Figure 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline
D D1 FD SD
e
E
E1
SE
ddd
BALL "A1"
FE A e b A1 A2
BGA-Z33
Note: Drawing is not to scale.
Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data
millimeters Symbol Typ A A1 A2 b D D1 ddd E E1 e FD FE SD SE 7.000 5.600 - 11.000 8.800 0.800 0.700 1.100 0.400 0.400 0.350 6.900 - - 10.900 - - - - - - 0.250 0.900 0.450 7.100 - 0.100 11.100 - - - - - - 0.2756 0.2205 - 0.4331 0.3465 0.0315 0.0276 0.0433 0.0157 0.0157 0.0138 0.2717 - - 0.4291 - - - - - - Min Max 1.200 0.0098 0.0354 0.0177 0.2795 - 0.0039 0.4370 - - - - - - Typ Min Max 0.0472 inches
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M29W320DT, M29W320DB
PART NUMBERING Table 18. Ordering Information Scheme
Example: Device Type M29 Operating Voltage W = VCC = 2.7 to 3.6V Device Function 320D = 32 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 70 = 70 ns 90 = 90 ns Package N = TSOP48: 12 x 20 mm ZA = TFBGA63: 7x11mm, 0.80 mm pitch Temperature Range 1 = 0 to 70 C 6 = -40 to 85 C Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing
M29W320DB
90
N
1
T
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
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M29W320DT, M29W320DB
APPENDIX A. BLOCK ADDRESS TABLE Table 19. Top Boot Block Addresses, M29W320DT
# 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 Size (KByte/ KWord) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (x8) Address Range (x16) 34 33 32 31 3FC000h-3FFFFFh 1FE000h-1FFFFFh 3FA000h-3FBFFFh 1FD000h-1FDFFFh 3F8000h-3F9FFFh 1FC000h-1FCFFFh 3F0000h-3F7FFFh 1F8000h-1FBFFFh 3E0000h-3EFFFFh 1F0000h-1F7FFFh 3D0000h-3DFFFFh 1E8000h-1EFFFFh 3C0000h-3CFFFFh 1E0000h-1E7FFFh 3B0000h-3BFFFFh 1D8000h-1DFFFFh 3A0000h-3AFFFFh 1D0000h-1D7FFFh 390000h-39FFFFh 1C8000h-1CFFFFh 380000h-18FFFFh 1C0000h-1C7FFFh 370000h-37FFFFh 1B8000h-1BFFFFh 360000h-36FFFFh 1B0000h-1B7FFFh 350000h-35FFFFh 1A8000h-1AFFFFh 340000h-34FFFFh 1A0000h-1A7FFFh 330000h-33FFFFh 320000h-32FFFFh 310000h-31FFFFh 300000h-30FFFFh 198000h-19FFFFh 190000h-197FFFh 188000h-18FFFFh 180000h-187FFFh 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 220000h-22FFFFh 210000h-21FFFFh 200000h-20FFFFh 110000h-117FFFh 108000h-10FFFFh 100000h-107FFFh
1F0000h-1FFFFFh 0F8000h-0FBFFFh 1E0000h-1EFFFFh 0F0000h-0F7FFFh 1D0000h-1DFFFFh 0E8000h-0EFFFFh 1C0000h-1CFFFFh 0E0000h-0E7FFFh 1B0000h-1BFFFFh 0D8000h-0DFFFFh 1A0000h-1AFFFFh 0D0000h-0D7FFFh 190000h-19FFFFh 0C8000h-0CFFFFh 180000h-18FFFFh 0C0000h-0C7FFFh 170000h-17FFFFh 0B8000h-0BFFFFh 160000h-16FFFFh 0B0000h-0B7FFFh 150000h-15FFFFh 0A8000h-0AFFFFh 140000h-14FFFFh 0A0000h-0A7FFFh 130000h-13FFFFh 120000h-12FFFFh 110000h-11FFFFh 100000h-10FFFFh 098000h-09FFFFh 090000h-097FFFh 088000h-08FFFFh 080000h-087FFFh
0F0000h-0FFFFFh 078000h-07FFFFh 0E0000h-0EFFFFh 070000h-077FFFh 0D0000h-0DFFFFh 068000h-06FFFFh 0C0000h-0CFFFFh 060000h-067FFFh 0B0000h-0BFFFFh 058000h-05FFFFh 0A0000h-0AFFFFh 050000h-057FFFh 090000h-09FFFFh 080000h-08FFFFh 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 000000h-00FFFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh 030000h-037FFFh 028000h-02FFFFh 020000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 000000h-007FFFh
2F0000h-2FFFFFh 178000h-17FFFFh 2E0000h-2EFFFFh 170000h-177FFFh 2D0000h-2DFFFFh 168000h-16FFFFh 2C0000h-2CFFFFh 160000h-167FFFh 2B0000h-2BFFFFh 158000h-15FFFFh 2A0000h-2AFFFFh 150000h-157FFFh 290000h-29FFFFh 280000h-28FFFFh 270000h-27FFFFh 260000h-26FFFFh 250000h-25FFFFh 240000h-24FFFFh 230000h-23FFFFh 148000h-14FFFFh 140000h-147FFFh 138000h-13FFFFh 130000h-137FFFh 128000h-12FFFFh 120000h-127FFFh 118000h-11FFFFh
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M29W320DT, M29W320DB
Table 20. Bottom Boot Block Addresses, M29W320DB
# 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 Size (KByte/ KWord) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (x8) Address Range (x16) 34 33 32 31 3F0000h-3FFFFFh 1F8000h-1FFFFFh 3E0000h-3EFFFFh 1F0000h-1F7FFFh 3D0000h-3DFFFFh 1E8000h-1EFFFFh 3C0000h-3CFFFFh 1E0000h-1E7FFFh 3B0000h-3BFFFFh 1D8000h-1DFFFFh 3A0000h-3AFFFFh 1D0000h-1D7FFFh 390000h-39FFFFh 1C8000h-1CFFFFh 380000h-18FFFFh 1C0000h-1C7FFFh 370000h-37FFFFh 1B8000h-1BFFFFh 360000h-36FFFFh 1B0000h-1B7FFFh 350000h-35FFFFh 1A8000h-1AFFFFh 340000h-34FFFFh 1A0000h-1A7FFFh 330000h-33FFFFh 320000h-32FFFFh 310000h-31FFFFh 300000h-30FFFFh 198000h-19FFFFh 190000h-197FFFh 188000h-18FFFFh 180000h-187FFFh 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 1F0000h-1FFFFFh 0F8000h-0FBFFFh 1E0000h-1EFFFFh 0F0000h-0F7FFFh 1D0000h-1DFFFFh 0E8000h-0EFFFFh 1C0000h-1CFFFFh 0E0000h-0E7FFFh 1B0000h-1BFFFFh 0D8000h-0DFFFFh 1A0000h-1AFFFFh 0D0000h-0D7FFFh 190000h-19FFFFh 0C8000h-0CFFFFh 180000h-18FFFFh 0C0000h-0C7FFFh 170000h-17FFFFh 0B8000h-0BFFFFh 160000h-16FFFFh 0B0000h-0B7FFFh 150000h-15FFFFh 0A8000h-0AFFFFh 140000h-14FFFFh 0A0000h-0A7FFFh 130000h-13FFFFh 120000h-12FFFFh 110000h-11FFFFh 100000h-10FFFFh 098000h-09FFFFh 090000h-097FFFh 088000h-08FFFFh 080000h-087FFFh
0F0000h-0FFFFFh 078000h-07FFFFh 0E0000h-0EFFFFh 070000h-077FFFh 0D0000h-0DFFFFh 068000h-06FFFFh 0C0000h-0CFFFFh 060000h-067FFFh 0B0000h-0BFFFFh 058000h-05FFFFh 0A0000h-0AFFFFh 050000h-057FFFh 090000h-09FFFFh 080000h-08FFFFh 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 008000h-00FFFFh 006000h-007FFFh 004000h-005FFFh 000000h-003FFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh 030000h-037FFFh 028000h-02FFFFh 020000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 004000h-007FFFh 003000h-003FFFh 002000h-002FFFh 000000h-001FFFh
2F0000h-2FFFFFh 178000h-17FFFFh 2E0000h-2EFFFFh 170000h-177FFFh 2D0000h-2DFFFFh 168000h-16FFFFh 2C0000h-2CFFFFh 160000h-167FFFh 2B0000h-2BFFFFh 158000h-15FFFFh 2A0000h-2AFFFFh 150000h-157FFFh 290000h-29FFFFh 280000h-28FFFFh 270000h-27FFFFh 260000h-26FFFFh 250000h-25FFFFh 240000h-24FFFFh 230000h-23FFFFh 220000h-22FFFFh 210000h-21FFFFh 200000h-20FFFFh 148000h-14FFFFh 140000h-147FFFh 138000h-13FFFFh 130000h-137FFFh 128000h-12FFFFh 120000h-127FFFh 118000h-11FFFFh 110000h-117FFFh 108000h-10FFFFh 100000h-107FFFh
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M29W320DT, M29W320DB
APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure Table 21. Query Structure Overview
Address Sub-section Name x16 10h 1Bh 27h 40h 61h x8 20h 36h 4Eh 80h C2h CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query table Security Code Area Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) 64 bit unique device number Description
is read from the memory. Tables 21, 22, 23, 24, 25 and 26 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 26, Security Code area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by ST. Issue a Read command to return to Read mode.
Note: Query data are always presented on the lowest order data outputs.
Table 22. CFI Query Identification String
Address Data x16 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah x8 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h 0051h 0052h 0059h 0002h 0000h 0040h Address for Primary Algorithm extended Query table (see Table 24) 0000h 0000h 0000h 0000h 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported Address for Alternate Algorithm extended Query table NA P = 40h Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Query Unique ASCII String "QRY" "Q" "R" "Y" AMD Compatible Description Value
NA
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are `0'.
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M29W320DT, M29W320DB
Table 23. CFI Query System Interface Information
Address Data x16 1Bh x8 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Typical timeout per single byte/word program = 2n s Typical timeout for minimum size write buffer program = 2n s Typical timeout per individual block erase = 2n ms Typical timeout for full chip erase = 2n ms Maximum timeout for byte/word program = 2n times typical Maximum timeout for write buffer program = 2n times typical Maximum timeout per individual block erase = 2n times typical Maximum timeout for chip erase = 2n times typical 2.7V Description Value
1Ch
38h
0036h
3.6V
1Dh
3Ah
00B5h
11.5V
1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h
3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch
00C5h 0004h 0000h 000Ah 0000h 0005h 0000h 0004h 0000h
12.5V 16s NA 1s NA 512s NA 16s NA
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M29W320DT, M29W320DB
Table 24. Device Geometry Definition
Address Data x16 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch x8 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h 0016h 0002h 0000h 0000h 0000h 0004h 0000h 0000h 0040h 0000h 0001h 0000h 0020h 0000h 0000h 0000h 0080h 0000h 003Eh 0000h 0000h 0001h Device Size = 2n in number of bytes Flash Device Interface Code description Maximum number of bytes in multi-byte program or page = 2n Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. Region 1 Information Number of identical size erase block = 0000h+1 Region 1 Information Block size in Region 1 = 0040h * 256 byte Region 2 Information Number of identical size erase block = 0001h+1 Region 2 Information Block size in Region 2 = 0020h * 256 byte Region 3 Information Number of identical size erase block = 0000h+1 Region 3 Information Block size in Region 3 = 0080h * 256 byte Region 4 Information Number of identical-size erase block = 003Eh+1 Region 4 Information Block size in Region 4 = 0100h * 256 byte 4 MByte x8, x16 Async. NA Description Value
4
1 16 Kbyte 2 8 Kbyte 1 32 Kbyte 63 64 Kbyte
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M29W320DT, M29W320DB
Table 25. Primary Algorithm-Specific Extended Query Table
Address Data x16 40h 41h 42h 43h 44h 45h x8 80h 82h 84h 86h 88h 8Ah 0050h 0052h 0049h 0031h 0030h 0000h Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write Block Protection 00 = not supported, x = number of blocks in per group Temporary Block Unprotect 00 = not supported, 01 = supported Block Protect /Unprotect 04 = M29W400B Simultaneous Operations, 00 = not supported Burst Mode, 00 = not supported, 01 = supported Page Mode, 00 = not supported, 01 = 4 page word, 02 = 8 page word VPP Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Top/Bottom Boot Block Flag 02h = Bottom Boot device, 03h = Top Boot device Primary Algorithm extended Query table unique ASCII string "PRI" "P" "R" "I" "1" "0" Yes Description Value
46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh
8Ch 8Eh 90h 92h 94h 96h 98h 9Ah
0002h 0001h 0001h 0004h 0000h 0000h 0000h 00B5h
2 1 Yes 4 No No No 11.5V
4Eh
9Ch
00C5h
12.5V
4Fh
9Eh
000xh
-
Table 26. Security Code Area
Address x16 61h 62h 63h 64h x8 C3h, C2h C5h, C4h C7h, C6h C9h, C8h Data XXXX XXXX XXXX XXXX 64 bit: unique device number Description
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APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any operation from modifying the data stored in the Flash. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described in the Signal Descriptions section. Unlike the Command Interface of the Program/ Erase Controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers. For example, the techniques for AMD parts will not work on STMicroelectronics parts. Care should be taken when changing drivers for one part to work on another. Programmer Technique The Programmer technique uses high (V ID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a block follow the flowchart in Figure 18, Programmer Equipment Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all blocks can be unprotected at the same time. To unprotect the chip follow Figure 19, Programmer Equipment Chip Unprotect Flowchart. Table 27, Programmer
Technique Bus Operations, gives a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. In-System Technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the Flash has been fitted to the system. To protect a block follow the flowchart in Figure 20, In-System Block Protect Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all the blocks can be unprotected at the same time. To unprotect the chip follow Figure 21, In-System Chip Unprotect Flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing.
Table 27. Programmer Technique Bus Operations, BYTE = V IH or VIL
Operation Block Protect Chip Unprotect Block Protection Verify Block Unprotection Verify E VIL VID G VID VID W VIL Pulse VIL Pulse Address Inputs A0-A20 A9 = VID, A12-A20 Block Address Others = X A9 = VID, A12 = VIH, A15 = VIH Others = X A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID, A12-A20 Block Address Others = X A0 = VIL, A1 = VIH, A6 = VIH, A9 = VID, A12-A20 Block Address Others = X Data Inputs/Outputs DQ15A-1, DQ14-DQ0 X X Pass = XX01h Retry = XX00h Retry = XX01h Pass = XX00h
VIL
VIL
VIH
VIL
VIL
VIH
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Figure 18. Programmer Equipment Block Protect Flowchart
START
ADDRESS = BLOCK ADDRESS Set-up W = VIH n=0
G, A9 = VID, E = VIL
Wait 4s Protect W = VIL Wait 100s W = VIH E, G = VIH, A0, A6 = VIL, A1 = VIH E = VIL Wait 4s G = VIL Wait 60ns Read DATA
Verify
DATA NO = 01h YES A9 = VIH E, G = VIH End PASS ++n = 25 YES A9 = VIH E, G = VIH FAIL
AI03469
NO
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Figure 19. Programmer Equipment Chip Unprotect Flowchart
START PROTECT ALL BLOCKS Set-up n=0 CURRENT BLOCK = 0
A6, A12, A15 = VIH(1) E, G, A9 = VID
Wait 4s Unprotect W = VIL Wait 10ms W = VIH E, G = VIH
ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1, A6 = VIH
E = VIL Wait 4s G = VIL Verify Wait 60ns Read DATA
INCREMENT CURRENT BLOCK
NO
DATA = 00h
YES
NO
++n = 1000 YES
LAST BLOCK YES A9 = VIH E, G = VIH PASS
NO
End
A9 = VIH E, G = VIH FAIL
AI03470
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Figure 20. In-System Equipment Block Protect Flowchart
START Set-up n=0 RP = VID WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
Protect
WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
Wait 100s WRITE 40h ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL Verify
Wait 4s READ DATA ADDRESS = BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIL
DATA NO = 01h YES RP = VIH End ISSUE READ/RESET COMMAND ++n = 25 YES RP = VIH ISSUE READ/RESET COMMAND NO
PASS
FAIL
AI03471
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Figure 21. In-System Equipment Chip Unprotect Flowchart
START PROTECT ALL BLOCKS Set-up n=0 CURRENT BLOCK = 0
RP = VID WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH
Unprotect
WRITE 60h ANY ADDRESS WITH A0 = VIL, A1 = VIH, A6 = VIH
Wait 10ms
WRITE 40h ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH Verify
Wait 4s READ DATA ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL, A1 = VIH, A6 = VIH INCREMENT CURRENT BLOCK
NO
DATA = 00h
YES
NO
++n = 1000 YES RP = VIH
LAST BLOCK YES RP = VIH
NO
End
ISSUE READ/RESET COMMAND
ISSUE READ/RESET COMMAND
FAIL
PASS
AI03472
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REVISION HISTORY Table 28. Document Revision History
Date March-2001 08-Jun-2001 22-Jun-2001 Version -01 -02 -03 First Issue (Brief Data) Document expanded to full Product Preview Minor text corrections to Read/Reset and Read CFI commands and Status Register Error and Toggle Bits. Document type: from Product Preview to Preliminary Data TFBGA connections and Block Addresses (x16) diagrams clarification Write Protect and Block Unprotect clarification CFI Primary Algorithm table, Block Protection change Added Block Protection Appendix "Write Protect/VPP" pin renamed to "VPP/Write Protect" to be consistent with abbreviation. Changes to the VPP/WP pin description, Figure 15 and Table 15. IPP added to Table 11 and ICC3 clarified. Modified description of VPP/WP operation in Unlock Bypass Command section. Added VPP/WP decoupling capacitor to Figure 10. Clarified Read/Reset operation during Erase Suspend. TFBGA package changed from 48 ball to 63 ball Description of Ready/Busy signal clarified (and Figure 14 modified) Clarified allowable commands during block erase Clarified the mode the device returns to in the CFI Read Query command section Erase Suspend Latency Time (typical and maximum) added to Program, Erase Times and Program, Erase Endurance Cycles table. Typical values added for Icc1 and Icc2 in DC characteristics table. Logic Diagram and Data Toggle Flowchart corrected. Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 07 equals 7.0). Document promoted to full datasheet. Data Retention added to Table 6, Program, Erase Times and Program, Erase Endurance Cycles, and Typical after 100k W/E Cycles column removed. TSOP48 package mechanical updated. Lead-free package options E and F added to Table 18, Ordering Information Scheme. Revision Details
27-Jul-2001
-04
05-Oct-2001
-05
07-Feb-2002 05-Apr-2002
-06 -07
19-Nov-2002
7.1
26-May-2003
7.2
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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